جهت دسترسی به کاربرگه ی زیر، از این لینک استفاده کنید. http://dl.pgu.ac.ir/handle/Hannan/73989
Title: Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells
Keywords: Science & Technology;Technology;Physical Sciences;Energy & Fuels;Materials Science, Multidisciplinary;Physics, Applied;Materials Science;Physics;quantum well;strain compensation;lattice match;multijunction subcell;bandgap engineering;III-V semiconductors;CARRIER COLLECTION EFFICIENCY;DETAILED BALANCE LIMIT;GAAS;STRAIN;GROWTH;SEMICONDUCTORS;SEGREGATION;TRANSPORT;EPITAXY;VOLTAGE;Applied Physics;0204 Condensed Matter Physics;0912 Materials Engineering;0999 Other Engineering
Issue Date: 19-Sep-2016
20-Jan-2015
1-Dec-2014
Publisher: Wiley
place: Commission of the European Communities;Commission of the European Communities
URI: https://dx.doi.org/10.1002/pip.2585
Other Identifiers: 1099-159X
http://hdl.handle.net/10044/1/40315
283798
302088
Type Of Material: Other
Appears in Collections:Physics

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