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Title: Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
Keywords: Science & Technology;Physical Sciences;Physics, Applied;Physics;ELECTRON-PHONON INTERACTION;ROOM-TEMPERATURE;QUANTUM DOTS;NANOCRYSTALS;OSCILLATOR;TRANSPORT;BLOCKADE;Applied Physics;Engineering;Physical Sciences
Issue Date: 30-Nov-2015
Publisher: American Institute of Physics
place: Commission of the European Communities
Description: Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystalquantum dots has been used to form a single-hole transistor.Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal.Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.
URI: http://dl.pgu.ac.ir/handle/Hannan/114145
Other Identifiers: 1077-3118
http://hdl.handle.net/10044/1/39068
http://dx.doi.org/10.1063/1.4936757
318804
Type Of Material: Other
Appears in Collections:Electrical and Electronic Engineering

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