جهت دسترسی به کاربرگه ی زیر، از این لینک استفاده کنید. http://dl.pgu.ac.ir/handle/Hannan/114109
Title: Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid
Keywords: Energy;Chemical Sciences;Engineering;Physical Sciences
Issue Date: 13-May-2016
Publisher: Elsevier
Description: Improved performance of Si nanowire arrays for capacitor electrodes in ionic liquid [Bmim][NTf2], is obtained by spin-on-doping the nanowires followed by hot, concentrated nitric acid oxidation. n- and p-type Si nanowire arrays are fabricated via a 2-step metal-assisted chemical etch process to increase the effective surface area. Spin-on-doping increases the doping density of the nanowires, enhancing the current by a factor of more than 3. The well-controlled HNO3 oxidation defines a thin, dense oxide layer on the Si nanowires increasing chemical stability, both expanding the electrochemical window and increasing the current further by a factor >2. Specific capacitances of 238 μF cm−2 (∼0.4 F g−1, 159 mF cm−3) and 404 μF cm−2 (∼0.7 F g−1, 269 mF cm−3) are obtained for n- and p-type Si nanowire arrays, respectively.
URI: http://dl.pgu.ac.ir/handle/Hannan/114109
Other Identifiers: 0013-4686
http://hdl.handle.net/10044/1/38840
http://dx.doi.org/10.1016/j.electacta.2016.05.088
Type Of Material: Other
Appears in Collections:Electrical and Electronic Engineering

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