Please use this identifier to cite or link to this item: http://dl.pgu.ac.ir/handle/1853/7124
Title: A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
Keywords: Impact ionization;Avalanche multiplication;BVCBO;BVCEO;Breakdown;SiGe HBTs;BiCMOS
Issue Date: 19-May-2005
Publisher: Georgia Institute of Technology
Description: This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.;M.S.;Committee Chair: John D. Cressler; Committee Member: Emmanouil M. Tentzeris; Committee Member: John Papapolymerou
URI: https://smartech.gatech.edu/handle/1853/7124
Type Of Material: Thesis
Appears in Collections:College of Engineering (CoE)

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