Please use this identifier to cite or link to this item: http://dl.pgu.ac.ir/handle/10722/239865
Title: Device Modelling from Atoms to Transistor: including the gate oxide
Description: Invited speaker - Session 2.4 Device Physics and Related
Other Identifiers: The 19th Annual Conference of The Physical Society of Hong Kong, The University of Hong Kong, Hong Kong, 3-4 June 2016
267311
http://hdl.handle.net/10722/239865
Type Of Material: OTHER
Appears in Collections:Department of Chemistry

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