Please use this identifier to cite or link to this item:
Title: Energy band diagram of device-grade silicon nanocrystals
Keywords: QD Chemistry;QD
Issue Date: 17-Mar-2016
Description: This work was supported by the EPSRC (EP/K022237/1) and the Leverhulme International Network (IN-2012-136). SA would like to acknowledge the support of the Ulster University Vice-Chancellor's Research Studentship and CR that of the NI-DEL studentship.;Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.;Publisher PDF;Peer reviewed
Other Identifiers: Macias-Montero , M , Askari , S , Mitra , S , Rocks , C , Ni , C , Svrcek , V , Connor , P A , Maguire , P , Irvine , J T S & Mariotti , D 2016 , ' Energy band diagram of device-grade silicon nanocrystals ' Nanoscale , vol 8 , no. 12 , pp. 6623-8 . DOI: 10.1039/c5nr07705b
PURE: 241576883
PURE UUID: c16d6ce5-452a-4f9c-974e-9eb0e40d8d37
PubMed: 26939617
Type Of Material: OTHER
Appears in Collections:Chemistry (School of)

Files in This Item:
Click on the URI links for accessing contents.

Items in HannanDL are protected by copyright, with all rights reserved, unless otherwise indicated.